Organic light-emitting display device and method of manufacturing the same

ABSTRACT

An organic light-emitting display apparatus includes: a substrate including a display area and a peripheral area at an outer side of the display area; a pixel electrode disposed in the display area of the substrate; a pixel-defining layer disposed on the pixel electrode and exposing at least a portion of the pixel electrode; an intermediate layer disposed on the pixel electrode; an opposite electrode disposed on the intermediate layer; a first conductive layer disposed in the peripheral area of the substrate and including at least one opening; a first block structure and a second block structure disposed on the first conductive layer and separated from each other with the at least one opening therebetween; and an encapsulation structure disposed on the opposite electrode in the display area and the peripheral area.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority from and the benefit of Korean PatentApplication No. 10-2016-0064954, filed on May 26, 2016, which is herebyincorporated by reference for all purposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments relate to an organic light-emitting displayapparatus and a method of manufacturing the same.

Discussion of the Background

Organic light-emitting display apparatuses are self-emitting typedisplay apparatuses that include an organic light-emitting device (OLED)including a hole injection electrode, an electron injection electrode,and an organic emission layer between the hole injection electrode andelectron injection electrode, wherein excitons, which are generated byholes injected from the hole injection electrode and electrons injectedfrom the electron injection electrode being united in the organicemission layer, emit light by falling from an excited state to a groundstate.

Organic light-emitting display apparatuses that are self-emitting typedisplay apparatuses require no additional light sources, and thus, theymay be driven by a low voltage, and may be formed to be thin andlightweight. Also, organic light-emitting display apparatuses haveexcellent characteristics, such as wide viewing angles, high contrast,and rapid response rates. Thus, the scope of use thereof has beenexpanded to encompass personal mobile devices, such as MP3 players andcellular phones, as well as televisions.

However, the lifespan of the OLED may be decreased by oxidation oflight-emitting materials caused by oxygen or water, and thus, anencapsulation unit for preventing oxygen or water from flowing into theOLED is needed. Recently, research and development has been activelyconducted on a multi-layer thin film encapsulation technology or anadhesive film for encapsulation, which may be applied to a large organiclight-emitting display apparatus and a flexible display apparatus.

Here, an organic layer included in the multi-layer thin film may easilyleak out to a peripheral area of a display apparatus. In this case,external oxygen, water, etc. may penetrate through the organic layer tothereby deteriorate the OLED and reduce the lifespan and the reliabilityof the display apparatus.

To prevent this problem, a method of detecting whether an organic layerhas leaked out has been developed in which a plurality of blockstructures are formed in the peripheral area of the display apparatus.To detect whether the organic layer has leaked out, a differentialinterference contrast (DIC) microscope may be used. The DIC microscopemay precisely show a surface or an interface of an object to beinspected, and thus, may be useful for inspecting an object which is noteasily detected via a general optical system. However, when the DICmicroscope is used to identify whether the organic layer is disposed inan area between the plurality of block structures, it is hard todistinguish a concave-convex shape included in surfaces of layersdisposed below the area between the plurality of block structures fromthe organic layer, because the surfaces are not flat.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventive concept,and, therefore, it may contain information that does not form the priorart that is already known in this country to a person of ordinary skillin the art.

SUMMARY

Exemplary embodiments provide an organic light-emitting displayapparatus and a method of manufacturing the same, whereby a defect ratemay be reduced by precisely detecting whether an organic layer isdisposed in an area between block structures.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the disclosure, or may belearned by practice of the inventive concept.

According to one or more exemplary embodiments, an organiclight-emitting display apparatus includes: a substrate including adisplay area and a peripheral area at an outer side of the display area;a pixel electrode disposed in the display area of the substrate; apixel-defining layer disposed on the pixel electrode and exposing atleast a portion of the pixel electrode; an intermediate layer disposedon the pixel electrode; an opposite electrode disposed on theintermediate layer; a first conductive layer disposed in the peripheralarea of the substrate and including at least one opening; a first blockstructure and a second block structure disposed on the first conductivelayer and separated from each other with the at least one openingtherebetween; and an encapsulation structure disposed on the oppositeelectrode in the display area and the peripheral area.

The organic light-emitting display apparatus may further include asecond conductive layer disposed between the substrate and the firstconductive layer so as to be insulated from the first conductive layer.

The at least one opening included in the first conductive layer mayoverlap at least a portion of the second conductive layer in a planview.

The organic light-emitting display apparatus may further include a thinfilm transistor disposed in the display area of the substrate andelectrically connected with the pixel electrode; and a via-insulatinglayer covering the thin film transistor, wherein the thin filmtransistor includes an active layer, a gate electrode insulated from theactive layer and disposed on a same layer as the second conductivelayer, and a source electrode and a drain electrode disposed on a samelayer as the first conductive layer.

Surface roughness of the first conductive layer may be greater thansurface roughness of the second conductive layer.

The first conductive layer may include titanium (Ti) and the secondconductive layer may include molybdenum (Mo).

The first block structure may include first layers disposed on a samelayer as the pixel-defining layer and including a same material as thepixel-defining layer, and the second block structure may include a firstlayer disposed on a same layer as the via-insulating layer and includinga same material as the via-insulating layer, and second layers disposedon the same layer as the pixel-defining layer and including the samematerial as the pixel-defining layer.

The organic light-emitting display apparatus may further include aconnection wire disposed in the peripheral area of the substrate andconnecting the opposite electrode with the first conductive layer,wherein the connection wire is disposed on a same layer as the pixelelectrode.

The connection wire may extend from an area contacting the oppositeelectrode to an area between the first conductive layer and the firstblock structure, the connection wire covering the at least one openingincluded in the first conductive layer.

A width of the at least one opening included in the first conductivelayer may be equal to or greater than about 2 μm.

The second block structure may be disposed at an outer side of the firstblock structure so as to surround at least a portion of the first blockstructure, and a height of the second block structure may be greaterthan a height of the first block structure.

The encapsulation structure may include a first inorganic layer, anorganic layer, and a second inorganic layer that are sequentiallydisposed over the opposite electrode, wherein the first inorganic layerand the second inorganic layer cover the first block structure and thesecond block structure and contact each other over the first blockstructure and the second block structure.

According to one or more exemplary embodiments, a method ofmanufacturing an organic light-emitting display apparatus includes:forming a first conductive layer including at least one opening in aperipheral area of a substrate; forming a pixel electrode in a displayarea of the substrate; forming a pixel-defining layer exposing at leasta portion of the pixel electrode; forming a first block structure and asecond block structure on the first conductive layer so as to beseparated from each other with the at least one opening therebetween,and so that the first block structure and the second block structure donot overlap the at least one opening; forming an intermediate layer onthe pixel electrode; forming an opposite electrode on the intermediatelayer; and forming an encapsulation structure on the opposite electrode.

The method may further include, before forming the first conductivelayer, forming a second conductive layer in the peripheral area of thesubstrate.

The method may further include, before forming the pixel electrode,forming in the display area of the substrate a thin film transistorincluding an active layer, a gate electrode insulated from the activelayer, and a source electrode and a drain electrode electricallyconnected to the active layer; and forming a via-insulating layer overthe substrate to cover the thin film transistor, wherein the forming ofthe second conductive layer is simultaneously performed with the formingof the gate electrode of the thin film transistor, and the forming ofthe first conductive layer is simultaneously performed with the formingof the source electrode and the drain electrode of the thin filmtransistor.

The second block structure may include a first layer and second layersdisposed on the first layer, the first block structure may include firstlayers disposed on a same layer as the second layers of the second blockstructure, the first layer of the second block structure may be formedsimultaneously with the forming of the via-insulating layer, and thefirst layers of the first block structure and the second layers of thesecond block structure may be formed simultaneously with the forming ofthe pixel-defining layer.

The method may further include forming in the peripheral area of thesubstrate a connection wire connecting the opposite electrode with thefirst conductive layer, wherein the forming of the connection wire isperformed simultaneously with the forming of the pixel electrode.

The connection wire may extend from an area contacting the oppositeelectrode to an area between the first conductive layer and the firstblock structure and covers the at least one opening included in thefirst conductive layer.

The second block structure may be formed at an outer side of the firstblock structure so as to surround at least a portion of the first blockstructure, and a height of the second block structure may be greaterthan a height of the first block structure.

The forming of the encapsulation structure may include: forming a firstinorganic layer to cover the opposite electrode, the first blockstructure, and the second block structure; forming an organic layer onthe first inorganic layer disposed at an inner side of the first blockstructure; and forming a second inorganic layer on the organic layer anda portion of the first inorganic layer covering the first blockstructure and the second block structure, wherein the first inorganiclayer and the second inorganic layer contact each other on the firstblock structure and the second block structure.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the inventive concept, and, together with thedescription, serve to explain principles of the inventive concept.

FIG. 1 is a schematic plan view of an organic light-emitting displayapparatus according to an exemplary embodiment.

FIG. 2 is a schematic cross-sectional view of a portion of the organiclight-emitting display apparatus of FIG. 1.

FIG. 3 is an enlarged plan view of an area A of FIG. 1.

FIG. 4A, FIG. 4B, FIG. 4C, FIG. 4D, FIG. 4E, FIG. 4F, and FIG. 4G arecross-sectional views for sequentially describing a method ofmanufacturing the organic light-emitting display apparatus of FIG. 2.

FIG. 5A and FIG. 5B are a schematic cross-sectional view and a schematicplan view, respectively, illustrating a portion of an organiclight-emitting display apparatus according to a comparative embodiment.

FIG. 6 is a schematic plan view of an organic light-emitting displayapparatus according to another exemplary embodiment.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings.

Spatially relative terms are intended to encompass differentorientations of an apparatus in use, operation, and/or manufacture inaddition to the orientation depicted in the drawings. For example, ifthe apparatus in the drawings is turned over, elements described as“below” or “beneath” other elements or features would then be oriented“above” the other elements or features. Thus, the exemplary term “below”can encompass both an orientation of above and below. Furthermore, theapparatus may be otherwise oriented (e.g., rotated 90 degrees or atother orientations), and, as such, the spatially relative descriptorsused herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the drawings are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a schematic plan view of an organic light-emitting displayapparatus according to an exemplary embodiment. FIG. 2 is a schematiccross-sectional view of a portion of the organic light-emitting displayapparatus of FIG. 1.

Referring to FIGS. 1 and 2, the organic light-emitting display apparatusaccording to an exemplary embodiment may include a substrate 110including a display area DA and a peripheral area PA at an outer side ofthe display area DA. A pixel electrode 141 may be disposed in thedisplay area DA of the substrate 110. A pixel-defining layer 118 may bedisposed on the pixel electrode 141 and include an opening exposing atleast a portion of the pixel electrode 141. An intermediate layer 142may be disposed on the pixel electrode 141, and an opposite electrode143 may be disposed on the intermediate layer 142. A first conductivelayer 136 may be disposed in the peripheral area PA of the substrate 110and include at least one opening 136H. A first block structure 170 and asecond block structure 180 may be disposed on the first conductive layer136 and separated from each other with the at least one opening 136Htherebetween, and an encapsulation structure 150 may be disposed on theopposite electrode 143 in the display area DA and the peripheral areaPA.

The substrate 110 may include the display area DA and the peripheralarea PA at the outer side of the display area DA, and may includevarious materials, such as glass, metal, or plastics. Also, thesubstrate 110 may be flexible. For example, the substrate 110 mayinclude a polymer resin, such as polyethersulfone (PES), polyacrylate(PAR), polyetherimide (PEI), polyethylene naphthalate (PEN),polyethyleneterephthalate (PET), polyphenylene sulfide (PPS),polyarylate, polyimide (PI), polycarbonate (PC), or cellulose acetatepropionate (CAP), but is not limited thereto.

A buffer layer 111 including an inorganic material, such as siliconoxide, silicon nitride, and/or silicon oxynitride, may be disposed onthe substrate 110. The buffer layer 111 may planarize an upper surfaceof the substrate 110 or prevent or minimize penetration of impuritiesfrom the substrate 110, etc. through an active layer 122 of a thin filmtransistor TFT1. The thin film transistor TFT1 may be disposed in thedisplay area DA of the substrate 110 and electrically connected to thepixel electrode 141. The thin film transistor TFT1 may include theactive layer 122 including a semiconductor material, such as amorphoussilicon, polycrystalline silicon, an oxide semiconductor, or an organicsemiconductor material. The thin film transistor TFT1 may also include agate electrode 124 insulated from the active layer 122, and a sourceelectrode 126S and a drain electrode 126D, with the source electrode126S and the drain electrode 126D each electrically connected to theactive layer 122. The gate electrode 124 is disposed on the active layer122, and according to a signal applied to the gate electrode 124, thesource electrode 126S and the drain electrode 126D may be electricallyconnected to each other. The gate electrode 124 may be formed as asingle layer or multiple layers including at least one of, for example,Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and Cu, bytaking into account adhesion to a layer adjacent to the gate electrode124, surface flatness of a layer on which the gate electrode 124 isstacked, machinability, etc. According to an exemplary embodiment, thegate electrode 124 may be formed as a single layer including Mo, Mohaving great surface flatness.

A first insulating layer 113 including an inorganic material, such assilicon oxide, silicon nitride, and/or silicon oxynitride, may bedisposed between the active layer 122 and the gate electrode 124 so asto provide insulation between the active layer 122 and the gateelectrode 124. Also, a second insulating layer 115 including aninorganic material, such as silicon oxide, silicon nitride, and/orsilicon oxynitride, may be disposed on the gate electrode 124, and thesource electrode 126S and the drain electrode 126D may be disposed inthe second insulating layer 115. Each of the source electrode 126S andthe drain electrode 126D may be electrically connected to the activelayer 122 via a contact hole formed in the second insulating layer 115and the first insulating layer 113. The source electrode 126S and thedrain electrode 126D may be disposed on a same layer as the firstconductive layer 136.

The source electrode 126S and the drain electrode 126D may be formed asa single layer or multiple layers including at least one materialselected from, for example, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Jr, Cr, Li,Ca, Mo, Ti, W, and Cu, by taking into account conductivity, etc.According to an exemplary embodiment, the source electrode 126S and thedrain electrode 126D may include Ti, and may be triple layers includingTi/Al/Ti. Here, Ti disposed as an uppermost layer doesn't have a highlevel of surface flatness. Accordingly, an upper surface of the sourceelectrode 126S and the drain electrode 126D may include minuteconcave-convex shapes.

A via-insulating layer 117 may be disposed on the thin film transistorTFT1 so as to cover the thin film transistor TFT1. The via-insulatinglayer 117 may have a flat upper surface so that the pixel electrode 141may be formed to be flat. The via-insulating layer 117 may include anorganic material, such as acryl, benzocyclobutene (BCB), PI, orhexamethyldisiloxane (HMDSO). In FIG. 2, the via-insulating layer 117 isillustrated as a single layer. However, the via-insulating layer 117 maybe modified in various ways. For example, the via-insulating layer 117may be multiple layers. The via-insulating layer 117 may extend from thedisplay area DA to the peripheral area PA and cover a portion of thefirst conductive layer 136 disposed in the peripheral area PA. However,the via-insulating layer 117 does not cover the opening 136H of thefirst conductive layer 136.

The via-insulating layer 117 may include a via-hole 117H exposing anyone of the source electrode 126S and the drain electrode 126D of thethin film transistor TFT1, and the pixel electrode 141 may contact anyone of the source electrode 126S and the drain electrode 126D via thevia-hole 117H and be electrically connected to the thin film transistorTFT1.

An organic light-emitting device OLED is disposed on the via-insulatinglayer 117, the organic light-emitting device OLED including the pixelelectrode 141, the intermediate layer 142 disposed on the pixelelectrode 141 and including an organic emission layer, and the oppositeelectrode 143.

The pixel electrode 141 may be formed as a transparent orsemi-transparent electrode or a reflective electrode. When the pixelelectrode 141 is formed as a a transparent or semi-transparentelectrode, the pixel electrode 141 may include a transparent conductivelayer. The transparent conductive layer may be at least one selectedfrom the group consisting of indium tin oxide (ITO), indium zinc oxide(IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium gallium oxide(IGO), and aluminum zinc oxide (AZO). In this case, the pixel electrode141 may further include a semi-transmissive layer to improve lightefficiency, in addition to the transparent conductive layer. Thesemi-transmissive layer may be at least one selected from the groupconsisting of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Jr, Cr, Li, Ca, and Ybformed as a thin film of several to tens of nm. When the pixel electrode141 is formed as a reflective electrode, the pixel electrode 141 mayinclude a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Jr,Cr, or a compound thereof, and a transparent conductive layer disposedabove and/or below the reflective layer. The transparent conductivelayer may be at least one selected from the group consisting of ITO,IZO, ZnO, In₂O₃, IGO, and AZO. However, the present inventive concept isnot limited thereto, and the pixel electrode 141 may be modified invarious ways to include various materials and various structures. Forexample, the pixel electrode 141 may be formed as a single layer ormultiple layers.

The pixel-defining layer 118 may be disposed on the via-insulating layer117 to cover an edge region of the pixel electrode 141. Thepixel-defining layer 118 may define a pixel and include an openingexposing at least a portion of the pixel electrode 141. Thepixel-defining layer 118 may include an organic material, such as PI orHMDSO. The pixel-defining layer 118 may be formed as a single layer ormultiple layers. In FIG. 2, the pixel-defining layer 118 is illustratedas a double layer 118L and 118H. However, the present inventive conceptis not limited thereto. The pixel-defining layer 118 may be disposed inthe display area DA and the peripheral area PA.

The intermediate layer 142 is disposed on a portion of the pixelelectrode 141, is the pixel electrode 141 being exposed by thepixel-defining layer 118. The intermediate layer 142 may include theorganic emission layer including a low molecular weight or a highmolecular weight material. When the organic emission layer includes alow molecular weight material, the intermediate layer 142 may include asingle layer or a stack including a hole injection layer (HIL), a holetransport layer (HTL), an organic emission layer, an electron transportlayer (ETL), an electron injection layer (EIL), or the like. Here, theorganic emission layer may include various organic materials, such ascopper phthalocyanine (CuPc),N,N′-Di(naphthalene-1-yl)-N,N′-diphenyl-benzidine: NpB,tris-8-hydroxyquinoline aluminum (Alq3), etc. These layers included inthe intermediate layer 142 may be formed by vapor deposition. When theorganic emission layer includes a high molecular weight material, theintermediate layer may generally have a structure including the HTL andthe EML. Here, the ETL may include PEDOT, and the organic emission layermay include a poly-phenylenevinylene-based organic material or apolyfluorene-based organic material.

However, the intermediate layer 142 is not limited thereto and mayinclude various structures. Also, the intermediate layer 142 may includean integral layer in a plurality of pixel electrodes 141 or may includepatterned layers, respectively corresponding to the plurality of pixelelectrodes 141.

The opposite electrode 143 may be disposed on the intermediate layer 142and the opposite electrode 143 may be disposed in the display area DAand the peripheral area PA. The opposite electrode 143 may be integrallyformed in a plurality of pixels, unlike the pixel electrode 141.

The opposite electrode 143 may be formed as a transparent orsemi-transparent electrode or a reflective electrode. When the oppositeelectrode 143 is formed as a transparent or semi-transparent, theopposite electrode 143 may include at least one material selected fromAg, Al, Mg, Li, Ca, Cu, LiF/Ca, LiF/Al, MgAg, and CaAg, and may beformed as a thin film having a thickness of several to tens of nm. Whenthe opposite electrode 143 is formed as a reflective electrode, theopposite electrode 143 may include at least one selected from the groupconsisting of Ag, Al, Mg, Li, Ca, Cu, LiF/Ca, LiF/Al, MgAg, and CaAg.However, structures and materials of the opposite electrode 143 are notlimited thereto and may be modified in various ways.

The encapsulation structure 150 is disposed on the opposite electrode143, and the encapsulation structure 150 may prevent or reducepenetration of external water or oxygen through the display area DA. Theencapsulation structure 150 may cover the display area DA and extend tothe peripheral area PA.

According to an exemplary embodiment, the encapsulation structure 150may include a first inorganic layer 151, an organic layer 152, and asecond inorganic layer 153 sequentially disposed over the oppositeelectrode 143. The first inorganic layer 151 may include silicon oxide,silicon nitride, and/or silicon oxynitride. The first inorganic layer151 is formed along a structure therebelow, and thus, an upper surfaceof the first inorganic layer 151 may not be flat as illustrated in FIG.2. The organic layer 152 may cover the first inorganic layer 151 andplanarize the upper surface of the first inorganic layer 151. Theorganic layer 152 may include at least one material selected from thegroup consisting of PET, PEN, PC, PI, polyethylenesulfonate,polyoxymethylene, polyarylate, and hexamethyldisiloxane. The secondinorganic layer 153 may cover the organic layer 152 and include siliconoxide, silicon nitride, and/or silicon oxynitride.

As shown above, the encapsulation structure 150 may include the firstinorganic layer 151, the organic layer 152, and the second inorganiclayer 153, and thus, even if cracks occur in the encapsulation structure150, the encapsulation structure 150 having the multi-layered structuremay prevent cracks from occurring between the first inorganic layer 151and the organic layer 152 or between the organic layer 152 and thesecond inorganic layer 153.

The first conductive layer 136 including the at least one opening 136His disposed in the peripheral area PA of the substrate 110. The firstconductive layer 136 may be electrically connected to the oppositeelectrode 143, and may function as a first power wire ELVSS supplyingpower to the opposite electrode 143.

According to an exemplary embodiment, a connection wire 160 connectingthe opposite electrode 143 with the first conductive layer 136 may bedisposed in the peripheral area PA of the substrate 110. The connectionwire 160 may be disposed on a same layer as the pixel electrode 141 andmay include a same material as the pixel electrode 141. The connectionwire 160 may be disposed below the opposite electrode 143 extending fromthe display area DA to the peripheral area PA so as to contact theopposite electrode 143, and may extend from the area at which theconnection wire 160 contacts the opposite electrode 143 to above thefirst conductive layer 136 so as to contact the first conductive layer136.

According to an exemplary embodiment, the connection wire 160 may coverthe opening 136H included in the first conductive layer 136.

The first conductive layer 136 may be disposed on a same layer as thesource electrode 126S and the drain electrode 126D of the thin filmtransistor TFT1 and may include a same material as the source electrode126S and the drain electrode 126D.

According to an exemplary embodiment, the first conductive layer 136 mayinclude Ti. For example, the first conductive layer 136 may be a triplelayer of Ti/Al/Ti.

A first block structure 170 and a second block structure 180 may bedisposed on the first conductive layer 136 so as to be separated fromeach other with the opening 136H therebetween. The first block structure170 may be disposed so as to be separated from the first conductivelayer 136 with the connection wire 160 between the first block structure170 and the first conductive layer 136.

According to an exemplary embodiment, the second block structure 180 maybe disposed at an outer side of the first block structure 170 so as tosurround at least a portion of the first block structure 170, and aheight h₂ of the second block structure 180 may be greater than a heighth₁ of the first block structure 170. Here, an “outer side” denotes aportion farther from the display area DA.

According to an exemplary embodiment, a second conductive layer 134 maybe disposed between the substrate 110 and the first conductive layer 136so as to be insulated from the first conductive layer 136. Also, theopening 136H included in the first conductive layer 136 may overlap withat least a portion of the second conductive layer 134 in plan view. Thesecond conductive layer 134 may be disposed on a same layer as the gateelectrode 124 and may include a same material as the gate electrode 124.For example, the second conductive layer 134 may include Mo having highsurface flatness. The second insulating layer 115 may be disposedbetween the first conductive layer 136 and the second conductive layer134 and extend from the display area DA to the peripheral area PA.

According to an exemplary embodiment, the first block structure 170 mayinclude first layers 171 and 172 disposed on a same layer as thepixel-defining layer 118 and including a same material as thepixel-defining layer 118, and the first layers 171 and 172 may togetherform a double layer like the pixel-defining layer 118. The second blockstructure 180 may include a first layer 181 disposed on a same layer asthe via-insulating layer 117 and including a same material as thevia-insulating layer 117, and second layers 182 and 183 disposed on thesame layer as the pixel-defining layer 118 and including the samematerial as the pixel-defining layer 118. The second layers 182 and 183may together form a double layer like the pixel-defining layer 118. FIG.2 illustrates the pixel-defining layer 118, the first layers 171 and 172of the first block structure 170, and the second layers 182 and 183 ofthe second block structure 180 as double layers. However, the presentinventive concept is not limited thereto, and the pixel-defining layer118, the first layers 171 and 172, and the second layers 182 and 183 maybe formed as single layers.

The encapsulation structure 150 may be disposed on the first blockstructure 170 and the second block structure 180 and extend from thedisplay area DA to the peripheral area PA. The first inorganic layer 151and the second inorganic layer 153 included in the encapsulationstructure 150 may cover the first block structure 170 and the secondblock structure 180 and contact each other on the first block structure170 and the second block structure 180. That is, the organic layer 152disposed between the first inorganic layer 151 and the second inorganiclayer 153 may be disposed only at an inner side of the first blockstructure 170, and thus, the first inorganic layer 151 and the secondinorganic layer 153 may directly contact each other at an outer side ofthe first block structure 170 at which the organic layer 152 is notdisposed. The encapsulation structure 150 may encapsulate the organiclight-emitting device OLED so that impurities, such as oxygen and water,do not penetrate through the organic light-emitting device OLED disposedon the display area DA. However, when the organic layer 152 extends toan outermost area of the organic light-emitting display apparatus,impurities, such as oxygen and water from the outside, may penetratethrough the organic light-emitting display apparatus though the organiclayer 152, and thus, may be transported through the organiclight-emitting device OLED. That is, the organic layer 152 may functionas a passage for penetration of impurities. However, the organiclight-emitting display apparatus according to an exemplary embodimentmay include the first block structure 170, and thus, the organic layer152 may not extend to the outer side of the first block structure 170due to being blocked by the first block structure 170. That is, theorganic layer 152 may be disposed only at the inner side of the firstblock structure 170.

Referring to FIG. 2, a third conductive layer 127, a fourth conductivelayer 128, and a thin film transistor TFT2 may further be disposed inthe peripheral area PA of the substrate 110, wherein the thirdconductive layer 127, the fourth conductive layer 128, and the thin filmtransistor TFT2 are disposed on the same layer as the source electrode126S and the drain electrode 126D and include the same material as thesource electrode 126S and the drain electrode 126D. The thin filmtransistor TFT2 may be a portion of a circuit unit for controlling anelectrical signal applied to the display area DA, and the thirdconductive layer 127 and the fourth conductive layer 128 may be portionsof a second power wire ELVDD and a data wire, respectively.

FIG. 3 is an enlarged schematic plan view of an area A of FIG. 1.

Referring to FIG. 3, the second conductive layer 134 is disposed at anarea I, which is at an outer side of the second block structure 180, thesecond block structure 180 is disposed at an area II, and the firstconductive layer 136 including the opening 136H is disposed at an areaIII between the first block structure 170 and the second block structure180. The organic layer 152 included in the encapsulation structure 150is disposed at the right side of the area III, with reference of FIG. 3.

FIG. 3 illustrates the opening 136H having a rectangular shape. However,the shape of the opening 136H is not limited thereto, and the opening136H may have various shapes, such as a rectangular shape, a polygonalshape, a circular shape, an oval shape, etc., which have rounded apexes.

According to an exemplary embodiment, a width of the opening 136H may beequal to or greater than about 2 μm. Here, the width may be defined as aminimum value from a length of each side of the opening 136H when theopening 136H has a polygonal shape, and as a diameter of a circumcircleof the opening 136H when the opening 136H has a shape of a curved line.The numerical value is based on a design rule. That is, it is not easyto pattern the opening 136H to have a width less than about 2 μm, due tolimitation of a process capability or equipment availability.

According to an exemplary embodiment, a surface roughness of the firstconductive layer 136 may be greater than a surface roughness of thesecond conductive layer 134. Here, the surface roughness refers to asize of minute concave-convex shapes generated on a surface of amaterial. When the surface is cut into a flat surface perpendicular to ameasurement object, an upper surface of the measurement object forms acertain curved line when seen from a cross-sectional perspective, and aheight difference between a lowest point and a highest point of thecurved line may be defined as the surface roughness. In addition tothis, there are various ways to define the surface roughness.

According to an exemplary embodiment, the first conductive layer 136 mayinclude Ti and the second conductive layer 134 may include Mo. A surfaceroughness of Ti may be greater than a surface roughness of Mo, and sincethe second conductive layer 134 having high surface flatness rather thanthe first conductive layer 136 having high surface roughness is disposedso as to overlap the opening 136H included in the first conductive layer136, a surface of an area corresponding to the opening 136H may havehigh surface flatness. The area corresponding to the opening 136H may bea point at which it is measured whether the organic layer 152 isdisposed between the first block structure 170 and the second blockstructure 180. This aspect will be described later.

FIGS. 4A through 4G are cross-sectional views for sequentiallydescribing a method of manufacturing the organic light-emitting displayapparatus of FIG. 2. Hereinafter, the method of manufacturing theorganic light-emitting display apparatus, according to an exemplaryembodiment, will be sequentially described, with reference to FIGS. 4Athrough 4G.

FIG. 4A is a cross-sectional view for describing forming the activelayer 122, a first insulating material 113′, and the gate electrode 124over the substrate 110.

The substrate 110 includes the display area DA and the peripheral areaPA at the outer side of the display area DA. The substrate 110 mayinclude various materials, as described above. The buffer layer 111including an inorganic material, such as silicon oxide, silicon nitride,and/or silicon oxynitride, may be formed on the substrate 110. Thefunction of the buffer layer 111 is as described above.

The active layer 122 is formed in the display area DA of the substrate110 by a mask process. The active layer 122 may include a semiconductormaterial, such as amorphous silicon, polycrystalline silicon, an oxidesemiconductor, or an organic semiconductor material.

Thereafter, the first insulating material 113′ is formed over thesubstrate 110. The first insulating material 113′ may include aninorganic material, such as silicon oxide, silicon nitride, and/orsilicon oxynitride. Thereafter, the gate electrode 124 is formed on thefirst insulating material 113′ by a mask process. The gate electrode 124is insulated from the active layer 122 via the first insulating material113′.

According to an exemplary embodiment, when the gate electrode 124 isformed, the second conductive layer 134 may be simultaneously formed inthe peripheral area PA of the substrate 110. The gate electrode 124 andthe second conductive layer 134 may be formed as a single layer ormultiple layers including at least one of Al, Pt, Pd, Ag, Mg, Au, Ni,Nd, Jr, Cr, Li, Ca, Mo, Ti, W, and Cu.

According to an exemplary embodiment, the gate electrode 124 and thesecond conductive layer 134 may include Mo having high surface flatness.

Referring to FIG. 4B, after a second insulating material (not shown)including an inorganic material, such as silicon oxide, silicon nitride,and/or silicon oxynitride, is formed on the gate electrode 124, anopening exposing a portion of the active layer 122 is formed in thefirst insulating material 113′ and the second insulating material toform the first insulating layer 113 and the second insulating layer 115.

After the second insulating layer 115 is formed, the source electrode126S, the drain electrode 126D, and the first conductive layer 136including the at least one opening 136H are formed on the secondinsulating layer 115. The first conductive layer 136 may be formed inthe peripheral area PA of the substrate 110 simultaneously with thesource electrode 126S and the drain electrode 126D of the thin filmtransistor TFT1. The source electrode 126S, the drain electrode 126D,and the first conductive layer 136 may be formed as a single layer ormultiple layers including at least one of, for example, Al, Pt, Pd, Ag,Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and Cu, by taking intoaccount conductivity, etc.

According to an exemplary embodiment, the source electrode 126S, thedrain electrode 126D, and the first conductive layer 136 may include Ti,and may be triple layers including Ti/Al/Ti. Here, Ti disposed on theuppermost layer does not have high surface flatness, and thus, uppersurfaces of the source electrode 126S, the drain electrode 126D, and thefirst conductive layer 136 may include minute concave-convex shapes.

Additionally, the third conductive layer 127 and/or the fourthconductive layer 128 may be simultaneously formed on the same layer asthe source electrode 126S and the drain electrode 126D. The thirdconductive layer 127 and/or the fourth conductive layer 128 may beformed in the peripheral area PA and may include the same material asthe source electrode 126S, the drain electrode 126D, and the firstconductive layer 136. The third conductive layer 127 and the fourthconductive layer 128 may be portions of the second power wire ELVSS andthe data wire, respectively.

Each of the source electrode 126S and the drain electrode 126D iselectrically connected to the active layer 122. As such, the thin filmtransistor TFT1 is formed including the active layer 122, the gateelectrode 124 insulated from the active layer 122, and the sourceelectrode 126S and the drain electrode 126D, the source electrode 126Sand the drain electrode 126D each being connected to the active layer122.

Referring to FIG. 4C, the via-insulating layer 117 covering the thinfilm transistor TFT1 is formed over the substrate 110. Thevia-insulating layer 117 includes the via-hole 117H exposing the sourceelectrode 126S or the drain electrode 126D of the thin film transistorTFT1. The via-insulating layer 117 may cover a portion of the firstconductive layer 136.

According to an exemplary embodiment, when the via-insulating layer 117is formed, the first layer 181 of the second block structure 180 may besimultaneously formed. The second block structure 180 may overlap atleast a portion of the first conductive layer 136 in plan view. However,the second block structure 180 does not overlap the opening 136H of thefirst conductive layer 136. Also, the second block structure 180 and thesecond conductive layer 134 may overlap each other in plan view.

Referring to FIG. 4D, the pixel electrode 141 is formed to beelectrically connected to the thin film transistor via the via-hole117H. The pixel electrode 141 is formed in the display area DA of thesubstrate 110.

According to an exemplary embodiment, the connection wire 160 connectingthe opposite electrode 143 and the first conductive layer 136 may beformed in the peripheral area PA of the substrate 110. The connectionwire 160 may be formed simultaneously with the pixel electrode 141. Theconnection wire 160 may extend from an area contacting the oppositeelectrode 143 to an area between the first conductive layer 136 and thefirst block structure 170 (FIG. 4E) and cover the opening 136H includedin the first conductive layer 136.

Referring to FIG. 4E, the pixel-defining layer 118 including an openingexposing at least a portion of the pixel electrode 141 is formed on thepixel electrode 141. The pixel-defining layer 118 may include an organicmaterial, such as PI or HMDSO. The pixel-defining layer 118 may beformed as a single layer or multiple layers. In FIG. 4E, it isillustrated that the pixel-defining layer 118 is a double layer 118L and118H. However, the present inventive concept is not limited thereto, andthe pixel-defining layer 118 may be formed as a single layer, ormultiple layers including three or more layers.

According to an exemplary embodiment, when the pixel-defining layer 118is formed, the first layers 171 and 172 of the first block structure170, and the second layers 182 and 183 of the second block structure 180may be formed at the same time. Here, the second block structure 180includes the first layer 181 and the second layers 182 and 183 disposedon the first layer 181, and the first block structure 170 includes thefirst layers 171 and 172 disposed on the same layer as the second layers182 and 183 of the second block structure 180. FIG. 4E illustrates thefirst layers 171 and 172 of the first block structure 170, and thesecond layers 182 and 183 of the second block structure 180, as doublelayers like the pixel-defining layer 118. However, the present inventiveconcept is not limited thereto.

The first block structure 170 and the second block structure 180 may beformed on the first conductive layer 136 and separated from each otherwith the opening 136H therebetween, so that the first block structure170 and the second block structure 180 do not overlap the opening 136H.According to an exemplary embodiment, the second block structure 180 maybe formed at the outer side of the first block structure 170 to surroundat least a portion of the first block structure 170, and a height h₂ ofthe second block structure 180 may be greater than a height h₁ of thefirst block structure 170. Here, the “outer side” denotes a portionwhich is farther from the display area DA of the substrate 110.

Thereafter, the intermediate layer 142 is formed on the pixel electrode141 exposed by the pixel-defining layer 118. The intermediate layer 142may further include at least one of an HIL, an HTL, an ETL, and an EIL,in addition to the organic emission layer.

Referring to FIG. 4F, the opposite electrode 143 is formed on theintermediate layer 142.

The opposite electrode 143 may be formed in the display area DA and theperipheral area PA and may be formed on the intermediate layer 142 andthe pixel-defining layer 118. The opposite electrode 143 may beintegrally formed in a plurality of pixels unlike the pixel electrode141. The opposite electrode 143 may be formed to cover a portion of theconnection wire 160 formed in the peripheral area PA, and may beelectrically connected to the connection wire 160. The oppositeelectrode 143 may not extend to an area in which the first conductivelayer 136 is formed, and the connection wire 160 may function as abridge wire for electrically connecting the opposite electrode 143 andthe first conductive layer 136 which are apart from each other.

After the opposite electrode 143 is formed, the first inorganic layer151 of the encapsulation structure 150 is formed on the oppositeelectrode 143 and throughout the display area DA and the peripheral areaPA. The first inorganic layer 151 may be formed to cover the oppositeelectrode 143, the first block structure 170, and the second blockstructure 180.

Referring to FIG. 4G, the organic layer 152 is formed on the firstinorganic layer 151 disposed at an inner side of the first blockstructure 170, and the second inorganic layer 153 is formed on theorganic layer 152 and the first inorganic layer 151 covering the firstblock structure 170 and the second block structure 180. Here, the firstinorganic layer 151 and the second inorganic layer 153 may contact eachother over the first block structure 170 and the second block structure180. That is, the organic layer 152 disposed between the first inorganiclayer 151 and the second inorganic layer 153 is disposed only at theinner side of the first block structure 170, and the first inorganiclayer 151 and the second inorganic layer 153 may directly contact eachother at the outer side of the first block structure 170 where theorganic layer 152 is not disposed. The encapsulation structure 150including the first inorganic layer 151, the organic layer 152, and thesecond inorganic layer 153 may encapsulate the organic light-emittingdevice OLED so that impurities, such as oxygen and water, may notpenetrate through the organic light-emitting device OLED disposed in thedisplay area DA. However, when the organic layer 152 extends to theoutermost area of the organic light-emitting display apparatus,impurities, such as external oxygen and water, may penetrate through theorganic light-emitting display apparatus via the organic layer 152 andbe transported to the organic light-emitting device OLED. That is, theorganic layer 152 may function as a passage through which impurities maypenetrate through the organic light-emitting device OLED. However, theorganic light-emitting display apparatus according to the exemplaryembodiments may include the first block structure 170 so that theorganic layer 152 may not extend to the outer side of the first blockstructure 170 due to being blocked by the first block structure 170.That is, the organic layer 152 may be disposed only at the inner side ofthe first block structure 170.

FIGS. 5A and 5B are respectively a schematic cross-sectional view and aschematic plan view of a portion of an organic light-emitting displayapparatus, according to a comparative embodiment.

FIGS. 5A and 5B are respectively the cross-sectional view and the planview of the organic light-emitting display apparatus showing the organiclayer 152 having leaked out to form leakage 152S in an area between thefirst block structure 170 and the second block structure 180.

The organic layer 152 may unintentionally leak out to the outer side ofthe first block structure 170 due to abnormalities in equipment or aprocess. FIG. 5A illustrates the case in which the organic layer 152 hasleaked out to form leakage 152S in an area III between the first blockstructure 170 and the second block structure 180.

Here, referring to FIGS. 3 and 5B, a concave-convex shape of eachsurface in areas I through III may be observed by using a DICmicroscope, etc. The first conductive layer 136 having high surfaceroughness is disposed below the area III between the first blockstructure 170 and the second block structure 180, and thus, when theremaining area of the first conductive layer 136 except the opening 136His measured by using the microscope, a concave-convex shape of a surfaceof the first conductive layer 136 is observed. Also, when the area inwhich the organic layer 152 is disposed is measured by using themicroscope, a concave-convex shape of a surface of the organic layer 152having high surface roughness is observed.

Referring to FIG. 5B, the organic layer 152 has leaked out to formleakage 152S in the area III between the first block structure 170 andthe second block structure 180. Here, before the organic layer 152 hasleaked out, since the first conductive layer 136 having high surfaceroughness is disposed below the area III, it is hard to distinguishwhether the concave-convex shape of the surface of the area III is dueto the first conductive layer 136 or the organic layer 152. However,since the first conductive layer 136 includes the opening 136H, theconcave-convex shape of the organic layer 152 is observed in the opening136H when the organic layer 152 has leaked out to form the leakage 152S.On the contrary, referring to FIG. 3, the surface of the secondconductive layer 134 is observed via the opening 136H of the firstconductive layer 136. Thus, when the organic layer 152 has not leakedout, the concave-convex shape is not observed in the opening 136H. Thus,whether the organic layer 152 has leaked out to the area III may beinspected by observing the opening 136H by using a DIC microscope.

FIG. 6 is a schematic plan view of an organic light-emitting displayapparatus according to another exemplary embodiment.

A first block structure 270 and a second block structure 280 aredisposed in the peripheral area PA at an outer side of the display areaDA. A first conductive layer 236 is disposed below an area between thefirst block structure 270 and the second block structure 280.

According to an exemplary embodiment, the first conductive layer 236 hasa plurality of openings 236H. Referring to FIG. 6, at least one opening236H may be formed at each of upper, lower, right, and left sides of thedisplay area DA. To which side of the display area DA an organic layer(not shown) has leaked out may be inspected via the opening 236H. FIG. 6illustrates that one opening 236H is formed at each of the upper, lower,right, and left sides of the display area DA. However, this is providedonly as an example.

According to the organic light-emitting display apparatus and the methodof manufacturing the same according to an exemplary embodiment, thefirst conductive layer 136 disposed below the first block structure 170and the second block structure 180 includes the opening 136Hcorresponding to an area between the first block structure 170 and thesecond block structure 180, and whether an organic layer is disposedbetween the first block structure 170 and the second block structure 180may be precisely detected by using the opening 136H as a measuringpoint, and thus, a defect rate of the organic light-emitting displayapparatus may be reduced.

As described above, according to the one or more of the above exemplaryembodiments, the organic light-emitting display apparatus having adecreased defect rate due to precise detection of whether or not anorganic layer is disposed between the block structures, and the methodof manufacturing the organic light-emitting display apparatus may beprovided.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope as defined by the following claims.

Although certain exemplary embodiments and implementations have been isdescribed herein, other embodiments and modifications will be apparentfrom this description.

Accordingly, the inventive concept is not limited to such embodiments,but rather to the broader scope of the presented claims and variousobvious modifications and equivalent arrangements.

What is claimed is:
 1. An organic light-emitting display apparatus,comprising: a substrate comprising a display area and a peripheral areaat an outer side of the display area; a pixel electrode, an intermediatelayer, and an opposite electrode disposed in the display area of thesubstrate; a first block structure disposed in the peripheral area andcomprising a first lower layer and a first upper layer; a second blockstructure disposed in the peripheral area and comprising a second lowerlayer, a second middle layer, and a second upper layer; a firstconductive layer disposed in the peripheral area of the substrate andcomprising at least one opening; a conductive pattern disposed in theperipheral area of the substrate and interposed between the firstconductive layer and the first lower layer, and the second lower layerand the second middle layer; and an encapsulation structure disposed onthe opposite electrode in the display area and the peripheral area,wherein: the first conductive layer includes a first portion disposed onone side of the opening and a second portion disposed on the other sideof the opening, and at least one of the first portion and the secondportion overlaps the second lower layer; the encapsulation structurecomprises a first inorganic layer, an organic layer, and a secondinorganic layer that are sequentially disposed over the oppositeelectrode; and the first inorganic layer and the second inorganic layercover the first block structure and the second block structure andcontact each other over the first block structure and the second blockstructure.
 2. The organic light-emitting display apparatus of claim 1,further comprising: a first layer disposed on the pixel electrode andexposing at least a portion of the pixel electrode; and a second layerdisposed on the first layer.
 3. The organic light-emitting displayapparatus of claim 2, wherein the first lower layer and the secondmiddle layer includes a same material as the first layer.
 4. The organiclight-emitting display apparatus of claim 2, wherein the first upperlayer and the second upper layer includes a same material as the secondlayer.
 5. The organic light-emitting display apparatus of claim 2,further comprising: a thin film transistor disposed in the display areaof the substrate and electrically connected with the pixel electrode;and a via-insulating layer covering the thin film transistor, whereinthe second lower layer includes a same material as the via-insulatinglayer.
 6. The organic light-emitting display apparatus of claim 1,wherein the conductive pattern connects the opposite electrode with thefirst conductive layer and the conductive pattern includes a samematerial as the pixel electrode.
 7. The organic light-emitting displayapparatus of claim 1, wherein: the second block structure is disposed atan outer side of the first block structure so as to surround at least aportion of the first block structure; and a height of the second blockstructure is greater than a height of the first block structure.
 8. Theorganic light-emitting display apparatus of claim 1, wherein a width ofthe at least one opening comprised in the first conductive layer isequal to or greater than about 2 μm.
 9. The organic light-emittingdisplay apparatus of claim 1, further comprising a second conductivelayer disposed between the substrate and the first conductive layer soas to be insulated from the first conductive layer.
 10. The organiclight-emitting display apparatus of claim 9, wherein the at least oneopening comprised in the first conductive layer overlaps at least aportion of the second conductive layer in a plan view.
 11. The organiclight-emitting display apparatus of claim 9, further comprising: a thinfilm transistor disposed in the display area of the substrate andelectrically connected with the pixel electrode; and a via-insulatinglayer covering the thin film transistor, wherein the thin filmtransistor comprises an active layer, a gate electrode insulated fromthe active layer and including a same material as the second conductivelayer, and a source electrode and a drain electrode including the samematerial as the first conductive layer.
 12. The organic light-emittingdisplay apparatus of claim 9, wherein a surface roughness of the firstconductive layer is greater than a surface roughness of the secondconductive layer.
 13. The organic light-emitting display apparatus ofclaim 9, wherein the first conductive layer comprises titanium (Ti) andthe second conductive layer comprises molybdenum (Mo).
 14. An organiclight-emitting display apparatus, comprising: a substrate comprising adisplay area and a peripheral area at an outer side of the display area;a pixel electrode disposed in the display area of the substrate; a firstblock structure disposed in the peripheral area and comprising a firstlower layer and a first upper layer; a second block structure disposedin the peripheral area and comprising a second lower layer, a secondmiddle layer, and a second upper layer; a first conductive layerdisposed in the peripheral area of the substrate and comprising at leastone opening; and a conductive pattern disposed in the peripheral area ofthe substrate and interposed between the first conductive layer and thefirst lower layer, and the second lower layer and the second middlelayer; wherein: the first conductive layer includes a first portiondisposed on one side of the opening and a second portion disposed on theother side of the opening, and at least one of the first portion and thesecond portion overlaps the second lower layer; and the first blockstructure and the second block structure are disposed on the firstconductive layer and separated from each other with the at least oneopening therebetween.
 15. An organic light-emitting display apparatus,comprising: a substrate comprising a display area and a peripheral areaat an outer side of the display area; a pixel electrode disposed in thedisplay area of the substrate; a first block structure disposed in theperipheral area and comprising a first lower layer and a first upperlayer; a second block structure disposed in the peripheral area andcomprising a second lower layer, a second middle layer, and a secondupper layer; a first conductive layer disposed in the peripheral area ofthe substrate and comprising at least one opening; a conductive patterndisposed in the peripheral area of the substrate and interposed betweenthe first conductive layer and the first lower layer, and the secondlower layer and the second middle layer; an intermediate layer disposedon the pixel electrode; and an opposite electrode disposed on theintermediate layer, wherein: the first conductive layer includes a firstportion disposed on one side of the opening and a second portiondisposed on the other side of the opening, and at least one of the firstportion and the second portion overlaps the second lower layer; theconductive pattern connects the opposite electrode with the firstconductive layer and the conductive pattern includes a same material asthe pixel electrode; and the conductive pattern extends from an areacontacting the opposite electrode to an area between the firstconductive layer and the first block structure, the conductive patterncovering the at least one opening comprised in the first conductivelayer.